Vertical Furnace for 300 -mm Wafers
The VF-5900 furnace is a continuation of the VF-5300 model and has been developed to welcome the new age of 300-mm silicon wafers. The VF-5900 has a batch-processing system for the mass-handling of 300-mm wafers.
Summary
The VF-5900, designed to process 300-mm wafers, can accept a stack of 12 FOUPs (Front Opening Unified Pods) and can continuously process 2 batches, each of 100 wafers. All the FOUPs loaded into the I/O port are conveyed to the buffer shelves. After that, only the FOUPs that are required are conveyed to the internal door opener. The wafers are transported in a vacuum-less environment by a highly reliable twin-arm this word means Z-theta movement robot. Ladder-type boat designed to minimize slip is a standard feature. The VF-5900 furnace uses an LGO heating element, and has a forced-cooling system to increase throughput. As an optional feature, N2 load lock can be utilized to maximize the processing capacity.
Features
High processing capacity Up to 100 wafers can be continuously processed in 2 batches. Newly developed heating elements The furnace has heaters for low-temperature/low-temperature processes. N2 load lock The capacity of the VF-5900's N2 load lock chamber has been redesigned to enhance throughput. Ease of use Control is simplified by use of the Model 1400 controller which incorporates industry data requirements. (HSMS and GEM compatible.) Maintenance The removable FOUP buffer allows easier maintenance. Footprint Only the main unit of the VF-5900 is set up in the clean room; the supporting systems can all be installed under the floor to significantly reduce the overall footprint.
Specification
Model | VF-5900 |
Wafer size | 300mm |
Outside dimension(mm) | W1200 x D2750 x H3350 |
Batch size | 100 |
Continual treatment | 2 batch |
Heater | LGO heater |
Service temperature | 300 - 1050deg.-c |
Flat zone(mm) | 1060 |
Temperature control | 4zone |
Cassette stock | 12 |
Process cassette | 8 |
Dummy cassette | 2 |
Monitor cassette | 2 |
Wafer transfer | vacuumless |
Finger | 5+1 |
Controller | Model 1400 |
Applicable to SECS | possible |
Applicable to AGV | possible |
Applicable to SMIF/FOUP | possible |
A Summary of Process Performance
Pyro.Ox Thick
film |
Pyro.Ox
Thin film |
P-D-Poly | Poly-Si | HTO | Si3N4 | TEOS | |||
Reaction gas | O2.H2 | O2.H2 | SiH4.PH3.H2 | SiH4 | SiH2Cl2.N2O | SiH2Cl2.NH3 | Si(C2H5O)4.O2 | ||
Growth temp.(deg.-c) | 1000 - 1250 | 800 - 1000 | 550 - 600 | 600 - 620 | 870 - 890 | 770 - 800 | - 750 | ||
Growth rate(A/min) | - | - | 12 - 20 | 60 - 100 | 40 - 50 | 20 - 50 | - 100 | ||
Number of wafer(sheet) | 150 | 150 | 25 | 100 | 100 | 100 | 100/50 | ||
Thickness
variation(%) |
Inside wafer | 2 | 2 | 3 | 2 | 3 | 3 | 4 | 3 |
Between wafers | 2 | 2 | 2 | 2 | 3 | 2 | 3 | 2 | |
Between batches | 2 | 2 | 2 | 1 | 2 | 2 | 2 | 2 |